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Technologies used in Makonis Semicon Design Solutions

Makonis Semicon specializes in advanced and mature node technologies, offering silicon-proven expertise across a wide spectrum of process geometries. Our capabilities span multiple high-impact domains including memory interface design, advanced packaging, and high-speed PHY integration. Below is a breakdown of our technology leadership by node, strategic customers, and key use-cases:

3nm Technology

Next-gen LPDDR interface IP with ultra-low power leakage for AI and mobile workloads.
UCIe-compliant PHY integration, enabling high-bandwidth chiplet connectivity for modular SoC architectures. Our 3nm solutions emphasize timing closure, IR/EM-aware layout, and power-aware floorplanning for maximum design efficiency.

4nm Technology

Custom LPDDR PHY implementation optimized for low-latency memory access in AI/ML workloads.
Support for multi-channel architectures, enabling high-throughput processing in datacenter and edge inference applications. We apply rigorous signal integrity analysis and advanced package-aware co-design techniques to meet the tightest performance specs.

5nm Technology

Full-stack DDR/LPDDR controller and PHY integration, enabling memory subsystems for compute-intensive platforms.
Cross-functional support spanning physical design, timing signoff, and memory calibration at both chip and system levels. We ensure silicon reliability and maximum bandwidth efficiency through thermal-aware routing and dynamic voltage management.

12nm / 16nm Technology

For customers targeting cost-sensitive or embedded markets, Makonis Semicon continues to deliver proven results at mature nodes:
DDR/LPDDR memory interface solutions tailored for storage controllers and industrial-grade embedded devices.
Power-optimized layout and timing closure techniques ensure consistent performance under harsh environmental conditions. Our deep familiarity with 12/16nm design flows allows us to strike the right balance between performance, cost, and reliability.

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